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STMicroelectronics

64-1472-31　［Discontinued］STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P　STGWT80H65DFB

Features

  • IGBT Discretes, STMicroelectronics

Spec

  • Quantity:1set(30pieces)
  • Maximum Continuous Collector Current:120 A
  • Maximum Collector Emitter Voltage:650 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:469 W
  • Package Type:TO-3P
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Switching Speed:1MHz
  • Transistor Configuration:Single
  • Length:15.8mm
  • Width:5mm
  • Height:20.1mm
  • Dimensions:15.8 x 5 x 20.1mm
  • Maximum Operating Temperature:+175 °C
  • CODE No.:168-8740
  •  
Order No. 64-1472-31
Model No. STGWT80H65DFB
Standard price JPY: 30,800 USD: 193.07
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(30pieces)
  Discontinued
Stock in Japan -

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