64-1457-08 ［Discontinued］IPG20N06S2L35ATMA1 N-Channel MOSFET, 20 A, 55 V OptiMOS, 8-Pin TDSON Infineon IPG20N06S2L35ATMA1
Features
- Infineon OptiMOS™ Dual Power MOSFET
Spec
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:20 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:44 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65 W
- Number of Elements per Chip:1
- CODE No.:165-5988
| Order No. | 64-1457-08 | |
|---|---|---|
| Model No. | IPG20N06S2L35ATMA1 | |
| Standard price |
JPY: 426,000
USD: 2,670.34
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(5000pieces) | |
|
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| Stock in Japan | - | |