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Infineon

64-1456-89　［Discontinued］SPD15P10PGBTMA1 P-Channel MOSFET, 15 A, 100 V SIPMOS, 3-Pin DPAK Infineon　SPD15P10PGBTMA1

Features

  • Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant

SpecSpec class="init"> ［Discontinued］SPD15P10PGBTMA1 P-Channel MOSFET, 15 A, 100 V SIPMOS, 3-Pin DPAK Infineon　SPD15P10PGBTMA1 64-1456-89 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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Infineon

64-1456-89　［Discontinued］SPD15P10PGBTMA1 P-Channel MOSFET, 15 A, 100 V SIPMOS, 3-Pin DPAK Infineon　SPD15P10PGBTMA1

特徴

  • Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant

仕様

  • Quantity:1bag(20pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:15 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:240 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2.1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Small Signal
  • Maximum Power Dissipation:128 W
  • Number of Elements per Chip:1
  • CODE No.:827-5300
  •  
Order No. 64-1456-89
Model No. SPD15P10PGBTMA1
Standard price JPY: 3,180 USD: 19.95
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init"> ［Discontinued］SPD15P10PGBTMA1 P-Channel MOSFET, 15 A, 100 V SIPMOS, 3-Pin DPAK Infineon　SPD15P10PGBTMA1 64-1456-89 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
Infineon

64-1456-89　［Discontinued］SPD15P10PGBTMA1 P-Channel MOSFET, 15 A, 100 V SIPMOS, 3-Pin DPAK Infineon　SPD15P10PGBTMA1

特徴

  • Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant

仕様

  • Quantity:1bag(20pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:15 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:240 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2.1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Small Signal
  • Maximum Power Dissipation:128 W
  • Number of Elements per Chip:1
  • CODE No.:827-5300
  •  
アズワン品番 64-1456-89
型番 SPD15P10PGBTMA1
標準価格 JPY: 3,180 USD: 19.95
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(20pieces)
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
Stock in Japan -

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