64-1456-87 [Discontinued]IPB039N10N3GATMA1 N-Channel MOSFET, 160 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon IPB039N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:160 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:7.1 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:7
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:214 W
- Typical Gate Charge @ Vgs:88 nC @ 10 V
- CODE No.:827-5299
| Order No. | 64-1456-87 | |
|---|---|---|
| Model No. | IPB039N10N3GATMA1 | |
| Standard price |
JPY: 1,610
USD: 10.09
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPB039N10N3GATMA1 N-Channel MOSFET, 160 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon IPB039N10N3GATMA1](https://aimg.as-1.co.jp/c/64/1456/87/64145686.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)