64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
FeaturesFeatures class="init">
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
Features
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:8.1 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:26 W
- Typical Turn-Off Delay Time:11 ns
- CODE No.:827-5296
-
Order No.Spec class="init">
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
特徴
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
仕様
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:8.1 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:26 W
- Typical Turn-Off Delay Time:11 ns
- CODE No.:827-5296
-
Order No.Order No.ss="init">
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
特徴
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
仕様
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:8.1 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:26 W
- Typical Turn-Off Delay Time:11 ns
- CODE No.:827-5296
-
アズワン品番
64-1456-85
Model No.
BSZ060NE2LSATMA1
標準価格
JPY: 2,600
USD: 16.31
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
特徴
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
仕様
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:8.1 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:26 W
- Typical Turn-Off Delay Time:11 ns
- CODE No.:827-5296
-
アズワン品番
64-1456-85
型番
BSZ060NE2LSATMA1
標準価格
JPY: 2,600
USD: 16.31
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1bag(25pieces)
Stock in Japan
Supplier Stock
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
Features
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:8.1 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:26 W
- Typical Turn-Off Delay Time:11 ns
- CODE No.:827-5296
Order No.Spec class="init">
64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1特徴
仕様
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