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Contact usContact usinit"> 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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Infineon

64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

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  • BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

FeaturesFeatures class="init"> 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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すべてのカテゴリ
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  • AXEL GLOBAL
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  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
  • AXEL GLOBAL
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  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
Infineon

64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

  • 印刷
  • PDF
  • BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

Features

  • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

Spec

  • Quantity:1bag(25pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:40 A
  • Maximum Drain Source Voltage:25 V
  • Maximum Drain Source Resistance:8.1 mΩ
  • Maximum Gate Threshold Voltage:2V
  • Minimum Gate Threshold Voltage:1.2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TSDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:26 W
  • Typical Turn-Off Delay Time:11 ns
  • CODE No.:827-5296
  •  
Order No.Spec class="init"> 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
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  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
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  • Discrete Semiconductors
  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
  • AXEL GLOBAL
  • カテゴリ一覧
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  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
Infineon

64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

  • 印刷
  • PDF
  • BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

特徴

  • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

仕様

  • Quantity:1bag(25pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:40 A
  • Maximum Drain Source Voltage:25 V
  • Maximum Drain Source Resistance:8.1 mΩ
  • Maximum Gate Threshold Voltage:2V
  • Minimum Gate Threshold Voltage:1.2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TSDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:26 W
  • Typical Turn-Off Delay Time:11 ns
  • CODE No.:827-5296
  •  
Order No.Order No.ss="init"> 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
Infineon

64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

  • 印刷
  • PDF
  • BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

特徴

  • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

仕様

  • Quantity:1bag(25pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:40 A
  • Maximum Drain Source Voltage:25 V
  • Maximum Drain Source Resistance:8.1 mΩ
  • Maximum Gate Threshold Voltage:2V
  • Minimum Gate Threshold Voltage:1.2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TSDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:26 W
  • Typical Turn-Off Delay Time:11 ns
  • CODE No.:827-5296
  •  
アズワン品番 64-1456-85
Model No. BSZ060NE2LSATMA1
標準価格 JPY: 2,600 USD: 16.31
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init"> 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
Infineon

64-1456-85 BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

  • 印刷
  • PDF
  • BSZ060NE2LSATMA1 N-Channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

特徴

  • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

仕様

  • Quantity:1bag(25pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:40 A
  • Maximum Drain Source Voltage:25 V
  • Maximum Drain Source Resistance:8.1 mΩ
  • Maximum Gate Threshold Voltage:2V
  • Minimum Gate Threshold Voltage:1.2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TSDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:26 W
  • Typical Turn-Off Delay Time:11 ns
  • CODE No.:827-5296
  •  
アズワン品番 64-1456-85
型番 BSZ060NE2LSATMA1
標準価格 JPY: 2,600 USD: 16.31
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(25pieces)
Stock in Japan
Supplier Stock

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