64-1456-50 [Discontinued]IPB50R299CPATMA1 N-Channel MOSFET, 12 A, 550 V CoolMOS CP, 3-Pin D2PAK Infineon IPB50R299CPATMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:299 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:104 W
- Typical Input Capacitance @ Vds:1190 pF @ 100 V
- CODE No.:827-5158
| Order No. | 64-1456-50 | |
|---|---|---|
| Model No. | IPB50R299CPATMA1 | |
| Standard price |
JPY: 2,260
USD: 14.17
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPB50R299CPATMA1 N-Channel MOSFET, 12 A, 550 V CoolMOS CP, 3-Pin D2PAK Infineon IPB50R299CPATMA1](https://aimg.as-1.co.jp/c/64/1456/50/64145649.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)