64-1456-49 ［Discontinued］IPB50R299CPATMA1 N-Channel MOSFET, 12 A, 550 V CoolMOS CP, 3-Pin D2PAK Infineon IPB50R299CPATMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:299 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:104 W
- Length:10.31mm
- CODE No.:165-5666
| Order No. | 64-1456-49 | |
|---|---|---|
| Model No. | IPB50R299CPATMA1 | |
| Standard price |
JPY: 165,000
USD: 1,026.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |