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64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
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64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
AXEL GLOBALAXEL GLOBALnit">
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
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すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
Infineon
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
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Features
Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
Spec
Quantity:1bag(25pieces)
Channel Type:N
Maximum Continuous Drain Current:30 A
Maximum Drain Source Voltage:75 V
Maximum Drain Source Resistance:26 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2.1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:136 W
Number of Elements per Chip:1
CODE No.:827-5120
Order No.
64-1456-33
Model No.
IPD30N08S2L21ATMA1
Standard priceStandard pricess="init">
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
Infineon
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
印刷
PDF
特徴
Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
仕様
Quantity:1bag(25pieces)
Channel Type:N
Maximum Continuous Drain Current:30 A
Maximum Drain Source Voltage:75 V
Maximum Drain Source Resistance:26 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2.1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:136 W
Number of Elements per Chip:1
CODE No.:827-5120
アズワン品番
64-1456-33
型番
IPD30N08S2L21ATMA1
標準価格
JPY:
6,080
USD:
38.14
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(25pieces)
Stock in Japan
Supplier StockSupplier Stock"init">
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
Infineon
64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
印刷
PDF
特徴
Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
仕様
Quantity:1bag(25pieces)
Channel Type:N
Maximum Continuous Drain Current:30 A
Maximum Drain Source Voltage:75 V
Maximum Drain Source Resistance:26 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2.1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:136 W
Number of Elements per Chip:1
CODE No.:827-5120
アズワン品番
64-1456-33
型番
IPD30N08S2L21ATMA1
標準価格
JPY:
6,080
USD:
38.14
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1bag(25pieces)
在庫数
サプライヤ在庫
Quote
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