64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
Features
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:75 V
- Maximum Drain Source Resistance:26 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:136 W
- Number of Elements per Chip:1
- CODE No.:827-5120
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64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1特徴
仕様
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