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64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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  • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
  • AXEL GLOBALAXEL GLOBALnit"> 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
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    • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
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    • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
    Infineon

    64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

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    • IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

    Features

    • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

    Spec

    • Quantity:1bag(25pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:30 A
    • Maximum Drain Source Voltage:75 V
    • Maximum Drain Source Resistance:26 mΩ
    • Maximum Gate Threshold Voltage:4V
    • Minimum Gate Threshold Voltage:2.1V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:DPAK (TO-252)
    • Mounting Type:Surface Mount
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:136 W
    • Number of Elements per Chip:1
    • CODE No.:827-5120
    •  
    Order No. 64-1456-33
    Model No. IPD30N08S2L21ATMA1
    Standard priceStandard pricess="init"> 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
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    • AXEL GLOBAL
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    • Electronics Components, Power & Connectors
    • Semiconductors
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    • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
    • AXEL GLOBAL
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    • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
    Infineon

    64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

    • 印刷
    • PDF
    • IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

    特徴

    • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

    仕様

    • Quantity:1bag(25pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:30 A
    • Maximum Drain Source Voltage:75 V
    • Maximum Drain Source Resistance:26 mΩ
    • Maximum Gate Threshold Voltage:4V
    • Minimum Gate Threshold Voltage:2.1V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:DPAK (TO-252)
    • Mounting Type:Surface Mount
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:136 W
    • Number of Elements per Chip:1
    • CODE No.:827-5120
    •  
    アズワン品番 64-1456-33
    型番 IPD30N08S2L21ATMA1
    標準価格 JPY: 6,080 USD: 38.14
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    Quantity 1bag(25pieces)
    Stock in Japan
    Supplier StockSupplier Stock"init"> 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • RS Components
    • 64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1
    Infineon

    64-1456-33 IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

    • 印刷
    • PDF
    • IPD30N08S2L21ATMA1 N-Channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

    特徴

    • Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

    仕様

    • Quantity:1bag(25pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:30 A
    • Maximum Drain Source Voltage:75 V
    • Maximum Drain Source Resistance:26 mΩ
    • Maximum Gate Threshold Voltage:4V
    • Minimum Gate Threshold Voltage:2.1V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:DPAK (TO-252)
    • Mounting Type:Surface Mount
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:136 W
    • Number of Elements per Chip:1
    • CODE No.:827-5120
    •  
    アズワン品番 64-1456-33
    型番 IPD30N08S2L21ATMA1
    標準価格 JPY: 6,080 USD: 38.14
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    入り数 1bag(25pieces)
    在庫数
    サプライヤ在庫

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