Infineon

64-1456-22　［Discontinued］IPD079N06L3GBTMA1 N-Channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon　IPD079N06L3GBTMA1

Features

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

Quantity:1bag(25pieces)
Channel Type:N
Maximum Continuous Drain Current:50 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:13.5 mΩ
Maximum Gate Threshold Voltage:2.2V
Minimum Gate Threshold Voltage:1.2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:79 W
Number of Elements per Chip:1
CODE No.:827-5088

Order No.Order No.ss="init"> ［Discontinued］IPD079N06L3GBTMA1 N-Channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon　IPD079N06L3GBTMA1 64-1456-22 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Infineon

64-1456-22　［Discontinued］IPD079N06L3GBTMA1 N-Channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon　IPD079N06L3GBTMA1

印刷

特徴

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

Quantity:1bag(25pieces)
Channel Type:N
Maximum Continuous Drain Current:50 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:13.5 mΩ
Maximum Gate Threshold Voltage:2.2V
Minimum Gate Threshold Voltage:1.2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:79 W
Number of Elements per Chip:1
CODE No.:827-5088

アズワン品番	64-1456-22
型番	IPD079N06L3GBTMA1
Standard price	JPY: 2,560 USD: 16.06 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(25pieces)

在庫数	-

This page is the page of ［Discontinued］IPD079N06L3GBTMA1 N-Channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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Countries and RegionsASONEs="init"> ［Discontinued］IPD079N06L3GBTMA1 N-Channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon　IPD079N06L3GBTMA1 64-1456-22 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

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Infineon

64-1456-22　［Discontinued］IPD079N06L3GBTMA1 N-Channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon　IPD079N06L3GBTMA1

Features

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

Quantity:1bag(25pieces)
Channel Type:N
Maximum Continuous Drain Current:50 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:13.5 mΩ
Maximum Gate Threshold Voltage:2.2V
Minimum Gate Threshold Voltage:1.2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:79 W
Number of Elements per Chip:1
CODE No.:827-5088

Order No.	64-1456-22
Model No.	IPD079N06L3GBTMA1
Standard price	JPY: 2,560 USD: 16.06 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(25pieces)

Stock in Japan	-