64-1455-56 ［Discontinued］IRFR4105ZPBF N-Channel MOSFET, 30 A, 55 V HEXFET, 3-Pin DPAK Infineon IRFR4105ZPBF
Features
- N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(75pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:24.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:48 W
- Maximum Operating Temperature:+175 °C
- CODE No.:165-7558
| Order No. | 64-1455-56 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | IRFR4105ZPBF | |||||||||||||||
| Standard price |
JPY: 17,400
USD: 109.15
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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64-1455-56 ［Discontinued］IRFR4105ZPBF N-Channel MOSFET, 30 A, 55 V HEXFET, 3-Pin DPAK Infineon IRFR4105ZPBF特徴
仕様
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