64-1455-50 ［Discontinued］IRFR3410PBF N-Channel MOSFET, 31 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR3410PBF
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［Discontinued］IRFR3410PBF N-Channel MOSFET, 31 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR3410PBF 64-1455-50 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1455-50 ［Discontinued］IRFR3410PBF N-Channel MOSFET, 31 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR3410PBF
Features
- N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(75pieces)
- Channel Type:N
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:39 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:110 W
- Transistor Material:Si
- CODE No.:166-0957
Order No. 64-1455-50 Model No. IRFR3410PBF Standard price JPY: 7,320 USD: 45.92 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(75pieces) 
Stock in Japan - -
