Infineon

64-1455-29　IRFL4105TRPBF N-Channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon　IRFL4105TRPBF

Features

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1set(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:5.2 A
Maximum Drain Source Voltage:55 V
Maximum Drain Source Resistance:45 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:SOT-223
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.1 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5885

Order No.Order No.ss="init"> 64-1455-29 IRFL4105TRPBF N-Channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon　IRFL4105TRPBF 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1455-29　IRFL4105TRPBF N-Channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon　IRFL4105TRPBF

印刷

特徴

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:5.2 A
Maximum Drain Source Voltage:55 V
Maximum Drain Source Resistance:45 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:SOT-223
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.1 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5885

アズワン品番 64-1455-29

Model No. IRFL4105TRPBF

標準価格

JPY: 157,000 USD: 984.82

Excange rate 1USD= 159.42JPY
Valid price in Japan

入り数 1set(2500pieces)

Stock in Japan

Supplier StockSupplier Stock"init"> 64-1455-29 IRFL4105TRPBF N-Channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon　IRFL4105TRPBF 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1455-29　IRFL4105TRPBF N-Channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon　IRFL4105TRPBF

印刷

特徴

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:5.2 A
Maximum Drain Source Voltage:55 V
Maximum Drain Source Resistance:45 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:SOT-223
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.1 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5885

アズワン品番	64-1455-29
型番	IRFL4105TRPBF
標準価格	JPY: 157,000 USD: 984.82 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1set(2500pieces)
在庫数
Supplier Stock

[$1]IRFL4105TRPBF N-Channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon[/$1]