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Infineon

64-1455-15　IRF9952TRPBF Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 30 V HEXFET, 8-Pin SOIC Infineon　IRF9952TRPBF

Features

  • Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Spec

  • Quantity:1bag(20pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:2.3 A, 3.5 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:150 mΩ, 400 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2 W
  • Number of Elements per Chip:2
  • CODE No.:827-3934
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Order No. 64-1455-15
Model No. IRF9952TRPBF
Standard price JPY: 2,620 USD: 16.44
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(20pieces)
Stock in Japan
Supplier Stock

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