64-1455-05 ［Discontinued］IRF8313TRPBF Dual N-Channel MOSFET, 9.7 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8313TRPBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.7 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:21.6 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:827-3903
| Order No. | 64-1455-05 | |
|---|---|---|
| Model No. | IRF8313TRPBF | |
| Standard price |
JPY: 3,160
USD: 19.66
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
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| Stock in Japan | - | |