64-1453-89 DMN2014LHAB-7 Dual N-Channel MOSFET, 9.3 A, 20 V, 7-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7
Features
- Dual N-Channel MOSFET, Diodes Inc.
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.3 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:28 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:U-DFN2030
- Mounting Type:Surface Mount
- Pin Count:7
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-8742
| Order No. | 64-1453-89 | |
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| Model No. | DMN2014LHAB-7 | |
| Standard price |
JPY: 146,000
USD: 915.19
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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