64-1453-15 [Out of stock]BSS131H6327XTSA1 N-Channel MOSFET, 110 mA, 240 V SIPMOS, 3-Pin SOT-23 Infineon BSS131H6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(250pieces)
- Channel Type:N
- Maximum Continuous Drain Current:110 mA
- Maximum Drain Source Voltage:240 V
- Maximum Drain Source Resistance:20 Ω
- Maximum Gate Threshold Voltage:1.8V
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:360 mW
- Dimensions:2.9 x 1.3 x 1mm
- CODE No.:827-0070
| Order No. | 64-1453-15 | |
|---|---|---|
| Model No. | BSS131H6327XTSA1 | |
| Standard price |
JPY: 6,290
USD: 39.46
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(250pieces) | |
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| Stock in Japan | - | |
![[Out of stock]BSS131H6327XTSA1 N-Channel MOSFET, 110 mA, 240 V SIPMOS, 3-Pin SOT-23 Infineon BSS131H6327XTSA1](https://aimg.as-1.co.jp/c/64/1453/15/64145314.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)