64-1452-89 BSS223PWH6327XTSA1 P-Channel MOSFET, 310 mA, 20 V OptiMOS P, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1set(500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:310 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:2.1 Ω
- Maximum Gate Threshold Voltage:1.2V
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOT-323 (SC-70)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:250 mW
- Typical Input Capacitance @ Vds:45 pF @ -15 V
- CODE No.:826-9991
| Order No. | 64-1452-89 | |
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| Model No. | BSS223PWH6327XTSA1 | |
| Standard price |
JPY: 6,020
USD: 37.74
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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