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[Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1 64-1452-48 【AXEL GLOBAL】 アズワン
取扱点数300万点
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64-1452-48 [Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1452-48 [Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
Infineon
64-1452-48 [Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
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Features
Infineon OptiMOS™ T2 Power MOSFETs. Infineon s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant)
Spec
Quantity:1bag(50pieces)
Channel Type:N
Maximum Continuous Drain Current:30 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:25 mΩ
Maximum Gate Threshold Voltage:2.2V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-16 V, +16 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:31 W
Typical Input Capacitance @ Vds:750 pF @ 25 V
CODE No.:826-9474
Order No.
64-1452-48
Model No.
IPD30N03S4L14ATMA1
Standard price
JPY:
3,560
USD:
22.33
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
[Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1 64-1452-48 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1452-48 [Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1452-48 [Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
Infineon
64-1452-48 [Discontinued]IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
印刷
PDF
特徴
Infineon OptiMOS™ T2 Power MOSFETs. Infineon s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant)
仕様
Quantity:1bag(50pieces)
Channel Type:N
Maximum Continuous Drain Current:30 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:25 mΩ
Maximum Gate Threshold Voltage:2.2V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-16 V, +16 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:31 W
Typical Input Capacitance @ Vds:750 pF @ 25 V
CODE No.:826-9474
アズワン品番
64-1452-48
型番
IPD30N03S4L14ATMA1
標準価格
JPY:
3,560
USD:
22.33
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(50pieces)
Stock in Japan
-
Quote
Other Requests