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Infineon

64-1452-45　IPP057N08N3GXKSA1 N-Channel MOSFET, 80 A, 80 V OptiMOS 3, 3-Pin TO-220 Infineon　IPP057N08N3GXKSA1

Features

  • Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:80 A
  • Maximum Drain Source Voltage:80 V
  • Maximum Drain Source Resistance:5.4 mΩ
  • Maximum Gate Threshold Voltage:3.5V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:150 W
  • Transistor Material:Si
  • CODE No.:145-8658
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Order No. 64-1452-45
Model No. IPP057N08N3GXKSA1
Standard price JPY: 18,100 USD: 113.46
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
Stock in Japan
Supplier Stock

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