64-1452-35 [Discontinued]BF999E6327HTSA1 N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BF999E6327HTSA1
Features
- Infineon Dual-gate MOSFET Tetrode. Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon
Spec
- Quantity:1bag(100pieces)
- Channel Type:N
- Maximum Continuous Drain Current:1.4 A
- Maximum Drain Source Voltage:30 V
- Maximum Gate Threshold Voltage:1.5V
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:MOSFET Tetrode
- Maximum Power Dissipation:200 mW
- Typical Input Capacitance @ Vds:2.5 pF @ 10 V
- CODE No.:826-9430
| Order No. | 64-1452-35 | |
|---|---|---|
| Model No. | BF999E6327HTSA1 | |
| Standard price |
JPY: 2,680
USD: 16.80
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(100pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BF999E6327HTSA1 N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BF999E6327HTSA1](https://aimg.as-1.co.jp/c/64/1452/35/64145234.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)