64-1452-34 ［Discontinued］BF999E6327HTSA1 N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BF999E6327HTSA1
Features
- Infineon Dual-gate MOSFET Tetrode. Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:1.4 A
- Maximum Drain Source Voltage:30 V
- Maximum Gate Threshold Voltage:1.5V
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:MOSFET Tetrode
- Maximum Power Dissipation:200 mW
- Number of Elements per Chip:1
- CODE No.:178-7400
| Order No. | 64-1452-34 | |
|---|---|---|
| Model No. | BF999E6327HTSA1 | |
| Standard price |
JPY: 66,500
USD: 416.85
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |