Infineon

64-1452-33 [Discontinued]BSP299H6327XUSA1 N-Channel MOSFET, 400 mA, 500 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP299H6327XUSA1

Features

  • Infineon SIPMOS® N-Channel MOSFETs

Spec

  • Quantity:1bag(25pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:400 mA
  • Maximum Drain Source Voltage:500 V
  • Maximum Drain Source Resistance:4 Ω
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2.1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-223
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Small Signal
  • Maximum Power Dissipation:1.8 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:826-9415
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Order No. 64-1452-33
Model No. BSP299H6327XUSA1
Standard price JPY: 3,000 USD: 18.81
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(25pieces)
  Discontinued
Stock in Japan -