64-1452-33 [Discontinued]BSP299H6327XUSA1 N-Channel MOSFET, 400 mA, 500 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP299H6327XUSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:400 mA
- Maximum Drain Source Voltage:500 V
- Maximum Drain Source Resistance:4 Ω
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1.8 W
- Minimum Operating Temperature:-55 °C
- CODE No.:826-9415
| Order No. | 64-1452-33 | |
|---|---|---|
| Model No. | BSP299H6327XUSA1 | |
| Standard price |
JPY: 3,000
USD: 18.81
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSP299H6327XUSA1 N-Channel MOSFET, 400 mA, 500 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP299H6327XUSA1](https://aimg.as-1.co.jp/c/64/1452/33/64145232.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)