64-1452-28 [Discontinued]BSP298H6327XUSA1 N-Channel MOSFET, 500 mA, 400 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP298H6327XUSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:500 mA
- Maximum Drain Source Voltage:400 V
- Maximum Drain Source Resistance:3 Ω
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1.8 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5822
| Order No. | 64-1452-28 | |
|---|---|---|
| Model No. | BSP298H6327XUSA1 | |
| Standard price |
JPY: 68,000
USD: 426.25
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSP298H6327XUSA1 N-Channel MOSFET, 500 mA, 400 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP298H6327XUSA1](https://aimg.as-1.co.jp/c/64/1452/28/64145228.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)