64-1452-11 [Discontinued]Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323 BFR193WH6327XTSA1
Features
- RF Bipolar Transistors, Infineon
Spec
- Quantity:1set(3000pieces)
- Transistor Type:NPN
- Maximum DC Collector Current:80 mA
- Maximum Collector Emitter Voltage:12 V
- Package Type:SOT-323 (SC-70)
- Mounting Type:Surface Mount
- Maximum Power Dissipation:580 mW
- Minimum DC Current Gain:70
- Transistor Configuration:Single
- Maximum Collector Base Voltage:20 V
- Maximum Emitter Base Voltage:2 V
- Maximum Operating Frequency:8 GHz
- Pin Count:3
- Number of Elements per Chip:1
- Maximum Operating Temperature:+150 °C
- CODE No.:165-5621
| Order No. | 64-1452-11 | |
|---|---|---|
| Model No. | BFR193WH6327XTSA1 | |
| Standard price |
JPY: 36,950
USD: 231.62
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323 BFR193WH6327XTSA1](https://aimg.as-1.co.jp/c/64/1452/11/64145211.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)