64-1451-91 BSP297H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP297H6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1bag(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:660 mA
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:1.8 Ω
- Maximum Gate Threshold Voltage:1.8V
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1.8 W
- Typical Turn-Off Delay Time:49 ns
- CODE No.:826-9272
| Order No. | 64-1451-91 | |
|---|---|---|
| Model No. | BSP297H6327XTSA1 | |
| Standard price |
JPY: 6,360
USD: 39.57
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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