64-1451-71 IPB600N25N3GATMA1 N-Channel MOSFET, 25 A, 250 V OptiMOS 3, 3-Pin D2PAK Infineon IPB600N25N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:25 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:60 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:136 W
- Number of Elements per Chip:1
- CODE No.:826-9204
| Order No. | 64-1451-71 | |
|---|---|---|
| Model No. | IPB600N25N3GATMA1 | |
| Standard price |
JPY: 5,000
USD: 31.34
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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