64-1451-45 IPD50P04P413ATMA1 P-Channel MOSFET, 50 A, 40 V OptiMOS P, 3-Pin DPAK Infineon IPD50P04P413ATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:50 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:12.6 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:58 W
- Width:6.22mm
- CODE No.:826-9109
| Order No. | 64-1451-45 | |
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| Model No. | IPD50P04P413ATMA1 | |
| Standard price |
JPY: 8,260
USD: 51.81
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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