64-1451-28 Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263) IGB10N60TATMA1
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64-1451-28 Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263) IGB10N60TATMA1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1451-28 Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263) IGB10N60TATMA1
Features
- Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
Spec
- Quantity:1bag(20pieces)
- Maximum Continuous Collector Current:10 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:110 W
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:10.31mm
- Width:9.45mm
- Height:4.57mm
- Dimensions:10.31 x 9.45 x 4.57mm
- Maximum Operating Temperature:+175 °C
- CODE No.:826-9055
Order No. 64-1451-28 Model No. IGB10N60TATMA1 Standard price JPY: 4,160 USD: 25.88 Excange rate 1USD= 160.72JPY
Valid price in JapanQuantity 1bag(20pieces) Stock in Japan 
Supplier Stock
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