64-1450-83 IRF7342TRPBF Dual P-Channel MOSFET, 3.4 A, 55 V HEXFET, 8-Pin SOIC Infineon IRF7342TRPBF
Features
- Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
Spec
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.4 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:170 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:826-8901
| Order No. | 64-1450-83 | |
|---|---|---|
| Model No. | IRF7342TRPBF | |
| Standard price |
JPY: 2,120
USD: 13.29
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|