Infineon

64-1450-80　［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF

印刷

特徴

P-Channel Power MOSFET 12V to 20V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(95pieces)
Channel Type:P
Maximum Continuous Drain Current:9.2 A
Maximum Drain Source Voltage:12 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:0.9V
Minimum Gate Threshold Voltage:0.4V
Maximum Gate Source Voltage:-8 V, +8 V
Package Type:SOIC
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5779

Order No. 64-1450-80

Model No. IRF7329PBF

Standard price

JPY: 7,400 USD: 46.42

Excange rate 1USD= 159.42JPY
Valid price in Japan

QuantityQuantityass="init"> ［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF 64-1450-80 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Infineon

64-1450-80　［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF

印刷

特徴

P-Channel Power MOSFET 12V to 20V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(95pieces)
Channel Type:P
Maximum Continuous Drain Current:9.2 A
Maximum Drain Source Voltage:12 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:0.9V
Minimum Gate Threshold Voltage:0.4V
Maximum Gate Source Voltage:-8 V, +8 V
Package Type:SOIC
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5779

アズワン品番	64-1450-80
型番	IRF7329PBF
標準価格	JPY: 7,400 USD: 46.42 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1set(95pieces)

在庫数	-

This page is the page of ［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

Explore AXELExplore AXEL"> ［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF 64-1450-80 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1450-80　［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF

印刷

特徴

P-Channel Power MOSFET 12V to 20V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1set(95pieces)
Channel Type:P
Maximum Continuous Drain Current:9.2 A
Maximum Drain Source Voltage:12 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:0.9V
Minimum Gate Threshold Voltage:0.4V
Maximum Gate Source Voltage:-8 V, +8 V
Package Type:SOIC
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5779

アズワン品番	64-1450-80
型番	IRF7329PBF
標準価格	JPY: 7,400 USD: 46.42 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1set(95pieces)

在庫数	-

[$1]［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon[/$1]

Explore AXEL

CategoriesASONEs="init"> ［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF 64-1450-80 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

How to use

Quote Other Requests

Infineon

64-1450-80　［Discontinued］IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon　IRF7329PBF

Features

P-Channel Power MOSFET 12V to 20V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1set(95pieces)
Channel Type:P
Maximum Continuous Drain Current:9.2 A
Maximum Drain Source Voltage:12 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:0.9V
Minimum Gate Threshold Voltage:0.4V
Maximum Gate Source Voltage:-8 V, +8 V
Package Type:SOIC
Mounting Type:Surface Mount
Transistor Configuration:Isolated
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2 W
Minimum Operating Temperature:-55 °C
CODE No.:165-5779

Order No.	64-1450-80
Model No.	IRF7329PBF
Standard price	JPY: 7,400 USD: 46.42 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1set(95pieces)

Stock in Japan	-