64-1450-76 [Discontinued]IRF7328TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7328TRPBF
Features
- Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
Spec
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:32 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Number of Elements per Chip:2
- CODE No.:826-8885
| Order No. | 64-1450-76 | |
|---|---|---|
| Model No. | IRF7328TRPBF | |
| Standard price |
JPY: 1,380
USD: 8.65
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF7328TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7328TRPBF](https://aimg.as-1.co.jp/c/64/1450/76/64145075.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)