64-1450-66 ［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF
FeaturesFeatures class="init">
［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF 64-1450-66 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1450-66 ［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
SpecSpec class="init">
［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF 64-1450-66 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1450-66 ［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:46 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Number of Elements per Chip:2
- CODE No.:826-8869
-
Order No.
64-1450-66
型番
IRF7313TRPBF
標準価格
JPY: 1,480
USD: 9.28
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1bag(20pieces)
Stock in Japan
-
64-1450-66 ［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
SpecSpec class="init">
［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF 64-1450-66 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1450-66 ［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF
-
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:46 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Number of Elements per Chip:2
- CODE No.:826-8869
-
Order No.
64-1450-66
型番
IRF7313TRPBF
標準価格
JPY: 1,480
USD: 9.28
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1bag(20pieces)
Stock in Japan
-
64-1450-66 ［Discontinued］IRF7313TRPBF Dual N-Channel MOSFET, 6.5 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7313TRPBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:46 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Number of Elements per Chip:2
- CODE No.:826-8869
| Order No. | 64-1450-66 | |
|---|---|---|
| 型番 | IRF7313TRPBF | |
| 標準価格 |
JPY: 1,480
USD: 9.28
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
|
||
| Stock in Japan | - | |