64-1450-62 [Discontinued]IRF7314TRPBF Dual P-Channel MOSFET, 5.3 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7314TRPBF
Features
- Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:5.3 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:98 mΩ
- Maximum Gate Threshold Voltage:0.7V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Number of Elements per Chip:2
- CODE No.:826-8863
| Order No. | 64-1450-62 | |
|---|---|---|
| Model No. | IRF7314TRPBF | |
| Standard price |
JPY: 2,600
USD: 16.18
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]IRF7314TRPBF Dual P-Channel MOSFET, 5.3 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7314TRPBF](https://aimg.as-1.co.jp/c/64/1450/62/64145061.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)