64-1450-59 [Discontinued]IRF7307TRPBF Dual N/P-Channel MOSFET, 4.7 A, 5.7 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7307TRPBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:4.7 A, 5.7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:70 mΩ, 140 mΩ
- Maximum Gate Threshold Voltage:0.7V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5937
| Order No. | 64-1450-59 | |
|---|---|---|
| Model No. | IRF7307TRPBF | |
| Standard price |
JPY: 186,000
USD: 1,165.93
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF7307TRPBF Dual N/P-Channel MOSFET, 4.7 A, 5.7 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7307TRPBF](https://aimg.as-1.co.jp/c/64/1450/59/64145059.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)