64-1450-44 IRF7105TRPBF Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V HEXFET, 8-Pin SOIC Infineon IRF7105TRPBF
特徴
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity:1bag(20pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:2.3 A, 3.5 A
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:160 mΩ, 400 mΩ
- Maximum Gate Threshold Voltage:3V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Typical Turn-Off Delay Time:45 ns
- CODE No.:826-8829
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Model No.Model No. class="init">
64-1450-44 IRF7105TRPBF Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V HEXFET, 8-Pin SOIC Infineon IRF7105TRPBF特徴
仕様
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