64-1446-32 [Discontinued]IPD50R399CPBTMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CP, 3-Pin DPAK Infineon IPD50R399CPBTMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:900 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:83 W
- Typical Turn-On Delay Time:35 ns
- CODE No.:825-9174
| Order No. | 64-1446-32 | |
|---|---|---|
| Model No. | IPD50R399CPBTMA1 | |
| Standard price |
JPY: 2,260
USD: 14.17
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPD50R399CPBTMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CP, 3-Pin DPAK Infineon IPD50R399CPBTMA1](https://aimg.as-1.co.jp/c/64/1446/32/64144631.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)