64-1446-31 [Discontinued]IPD50R399CPBTMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CP, 3-Pin DPAK Infineon IPD50R399CPBTMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:900 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:83 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6885
| Order No. | 64-1446-31 | |
|---|---|---|
| Model No. | IPD50R399CPBTMA1 | |
| Standard price |
JPY: 337,000
USD: 2,112.46
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPD50R399CPBTMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CP, 3-Pin DPAK Infineon IPD50R399CPBTMA1](https://aimg.as-1.co.jp/c/64/1446/31/64144631.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)