64-1446-20 BSC22DN20NS3GATMA1 N-Channel MOSFET, 7 A, 200 V OptiMOS 3, 8-Pin TDSON Infineon BSC22DN20NS3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:225 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:34 W
- Number of Elements per Chip:1
- CODE No.:145-9478
| Order No. | 64-1446-20 | |
|---|---|---|
| Model No. | BSC22DN20NS3GATMA1 | |
| Standard price |
JPY: 493,000
USD: 3,090.33
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(5000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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