64-1446-16 BSZ086P03NS3EGATMA1 P-Channel MOSFET, 40 A, 30 V OptiMOS P, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1set(5000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.4 mΩ
- Maximum Gate Threshold Voltage:1.9V
- Minimum Gate Threshold Voltage:3.1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:69 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6879
| Order No. | 64-1446-16 | |
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| Model No. | BSZ086P03NS3EGATMA1 | |
| Standard price |
JPY: 384,000
USD: 2,407.07
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(5000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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