64-1445-93 IPD042P03L3GATMA1 P-Channel MOSFET, 70 A, 30 V OptiMOS P, 3-Pin DPAK Infineon IPD042P03L3GATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
仕様
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.8 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Typical Turn-Off Delay Time:89 ns
- CODE No.:825-9051
| Order No. | 64-1445-93 | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | IPD042P03L3GATMA1 | ||||||||||||||
| 標準価格 |
JPY: 2,730
USD: 17.11
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | ||||||||||||||
Stock in JapanStock in Japanass="init">
64-1445-93 IPD042P03L3GATMA1 P-Channel MOSFET, 70 A, 30 V OptiMOS P, 3-Pin DPAK Infineon IPD042P03L3GATMA1特徴
仕様
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