64-1445-92 IPD042P03L3GATMA1 P-Channel MOSFET, 70 A, 30 V OptiMOS P, 3-Pin DPAK Infineon IPD042P03L3GATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:70 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.8 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Series:OptiMOS P
- CODE No.:165-6872
| Order No. | 64-1445-92 | |
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| Model No. | IPD042P03L3GATMA1 | |
| Standard price |
JPY: 459,000
USD: 2,877.20
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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