64-1434-40 ［Discontinued］IPD65R600E6BTMA1 N-Channel MOSFET, 7.3 A, 700 V CoolMOS E6, 3-Pin DPAK Infineon IPD65R600E6BTMA1
Features
- Infineon CoolMOS™E6/P6 series Power MOSFET. The Infineon range of CoolMOS ™ E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7.3 A
- Maximum Drain Source Voltage:700 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:63 W
- Typical Turn-On Delay Time:10 ns
- CODE No.:823-5591
| Order No. | 64-1434-40 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | IPD65R600E6BTMA1 | |||||||||||||||
| Standard price |
JPY: 890
USD: 5.58
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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64-1434-40 ［Discontinued］IPD65R600E6BTMA1 N-Channel MOSFET, 7.3 A, 700 V CoolMOS E6, 3-Pin DPAK Infineon IPD65R600E6BTMA1特徴
仕様
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