64-1434-33 Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23 BFR193E6327HTSA1
Features
- RF Bipolar Transistors, Infineon
Spec
- Quantity:1bag(25pieces)
- Transistor Type:NPN
- Maximum DC Collector Current:80 mA
- Maximum Collector Emitter Voltage:12 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Maximum Power Dissipation:580 mW
- Minimum DC Current Gain:70
- Transistor Configuration:Single
- Maximum Collector Base Voltage:20 V
- Maximum Emitter Base Voltage:2 V
- Maximum Operating Frequency:8 GHz
- Pin Count:3
- Number of Elements per Chip:1
- Width:1.3mm
- CODE No.:823-5538
| Order No. | 64-1434-33 | |
|---|---|---|
| Model No. | BFR193E6327HTSA1 | |
| Standard price |
JPY: 740
USD: 4.64
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|