64-1397-85 SQD19P06-60L_GE3 P-Channel MOSFET, 11 A, 60 V SQ Rugged, 3-Pin DPAK Vishay SQD19P06-60L_GE3
Features
- P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
Spec
- Quantity:1set(2000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:125 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:46 W
- Number of Elements per Chip:1
- CODE No.:145-2756
| Order No. | 64-1397-85 | |
|---|---|---|
| Model No. | SQD19P06-60L_GE3 | |
| Standard price |
JPY: 292,000
USD: 1,816.82
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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