64-1397-78 SQ4431EY-T1_GE3 P-Channel MOSFET, 6.2 A, 30 V SQ Rugged, 8-Pin SOIC Vishay SQ4431EY-T1_GE3
Features
- P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:6.2 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:52 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:6 W
- Maximum Operating Temperature:+175 °C
- CODE No.:165-6285
| Order No. | 64-1397-78 | |
|---|---|---|
| Model No. | SQ4431EY-T1_GE3 | |
| Standard price |
JPY: 248,000
USD: 1,554.57
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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