64-1389-66 ［Discontinued］SIA429DJT-T1-GE3 P-Channel MOSFET, 8.5 A, 20 V, 6-Pin PowerPAK SC-70 Vishay SIA429DJT-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8.5 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:60 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:PowerPAK SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Typical Input Capacitance @ Vds:1750 pF @ -10 V
- CODE No.:818-1450
| Order No. | 64-1389-66 | |
|---|---|---|
| Model No. | SIA429DJT-T1-GE3 | |
| Standard price |
JPY: 1,200
USD: 7.52
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |