64-1389-65 ［Discontinued］SIA429DJT-T1-GE3 P-Channel MOSFET, 8.5 A, 20 V, 6-Pin PowerPAK SC-70 Vishay SIA429DJT-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8.5 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:60 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:PowerPAK SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6298
| Order No. | 64-1389-65 | |
|---|---|---|
| Model No. | SIA429DJT-T1-GE3 | |
| Standard price |
JPY: 94,900
USD: 590.47
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |