64-1389-62 SIA416DJ-T1-GE3 N-Channel MOSFET, 11.3 A, 100 V ThunderFET, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3
Features
- N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11.3 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:130 mΩ
- Minimum Gate Threshold Voltage:1.6V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Maximum Operating Temperature:+150 °C
- CODE No.:818-1441
| Order No. | 64-1389-62 | |
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| Model No. | SIA416DJ-T1-GE3 | |
| Standard price |
JPY: 2,910
USD: 18.24
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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