64-1389-61 SIA416DJ-T1-GE3 N-Channel MOSFET, 11.3 A, 100 V ThunderFET, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3
特徴
- N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
仕様
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11.3 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:130 mΩ
- Minimum Gate Threshold Voltage:1.6V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK SC-70
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:19 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6297
| アズワン品番 | 64-1389-61 | |
|---|---|---|
| 型番 | SIA416DJ-T1-GE3 | |
| 標準価格 |
JPY: 162,000
USD: 1,016.18
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| 入り数 | 1set(3000pieces) | |
| 在庫数 |
|
|
| サプライヤ在庫 |
|
|