64-1389-56 ［Discontinued］SI7900AEDN-T1-GE3 Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:36 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.5 W
- Transistor Material:Si
- CODE No.:818-1416
| Order No. | 64-1389-56 | |
|---|---|---|
| Model No. | SI7900AEDN-T1-GE3 | |
| Standard price |
JPY: 1,960
USD: 12.29
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |